随着现代无线通信系统向高频化,宽带化,便携化方向发展,要求压控晶振频率高,频率范围宽,线性度好,频率稳定性好,频率牵引误差小,噪声低,封装尺寸小等特点,爱普生晶振公司旗下其推出的VG-4231CE压控晶振,具有频率范围宽快速响应,低消耗电流,封装尺寸小等特性,非常适用于无线通讯,高端智能手机,平板笔记本WLAN,蓝牙,数码相机,工业电子,汽车电子,消费电子,通信设备领域,该产品电源电压最大分别为3.3V±0.3V,3.3V±0.165V和5.0V±0.5V,它们都为低电流消耗类型,该系列在无负载情况下消耗电流最小仅为1.2mA。
VG-4231CE压控晶振Q3614CE00006100非常适用于高端智能手机应用
| 压控晶体振荡器 |
  型号
|
  频率
|
   尺寸
|
  输出波
|
  电源电压
|
| Q3614CE00000600 | VG-4231CE | 27.000000MHz | 3.20x2.50x1.05mm | CMOS | 1.600 to 2.000V |
| Q3614CE00001100 | VG-4231CE | 27.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00001200 | VG-4231CE | 27.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00001300 | VG-4231CE | 24.576000MHz | 3.20x2.50x1.05mm | CMOS | 1.600 to 2.000V |
| Q3614CE00002300 | VG-4231CE | 24.576000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00002400 | VG-4231CE | 16.384000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00002700 | VG-4231CE | 17.734475MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00002900 | VG-4231CE | 24.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00003100 | VG-4231CE | 36.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00004100 | VG-4231CE | 25.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00004300 | VG-4231CE | 32.768000MHz | 3.20x2.50x1.05mm | CMOS | 2.600 to 3.000V |
| Q3614CE00004400 | VG-4231CE | 25.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00004600 | VG-4231CE | 12.288000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00006000 | VG-4231CE | 11.289600MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00006100 | VG-4231CE | 32.768000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00006200 | VG-4231CE | 24.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00006600 | VG-4231CE | 28.636360MHz | 3.20x2.50x1.05mm | CMOS | 1.600 to 2.000V |
| Q3614CE00007100 | VG-4231CE | 32.768000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00007200 | VG-4231CE | 12.288000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00008000 | VG-4231CE | 16.777216MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00008100 | VG-4231CE | 12.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00008200 | VG-4231CE | 24.000000MHz | 3.20x2.50x1.05mm | CMOS | 1.600 to 2.000V |
| Q3614CE00008300 | VG-4231CE | 25.165800MHz | 3.20x2.50x1.05mm | CMOS | 1.600 to 2.000V |
| Q3614CE00009400 | VG-4231CE | 9.600000MHz | 3.20x2.50x1.05mm | CMOS | 2.600 to 3.000V |
| Q3614CE00009500 | VG-4231CE | 32.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00009700 | VG-4231CE | 25.000000MHz | 3.20x2.50x1.05mm | CMOS | 1.600 to 2.000V |
| Q3614CE00009800 | VG-4231CE | 13.560000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
| Q3614CE00009900 | VG-4231CE | 12.000000MHz | 3.20x2.50x1.05mm | CMOS | 3.000 to 3.600V |
VG-4231CE压控晶振Q3614CE00006100非常适用于高端智能手机应用
VG-4231CE压控晶振工作电流分别低至10mA和15mA,使其功耗大大降低,爱普生独有的输出使能功能OE提高了其精度,也实现了低抖动,低相位噪声的特点,其小尺寸的封装在产品使用过程中不会占用过多空间位置,大大满足了不同产品对安装空间的需求,可以适用于多种场合,具有很好的稳定性,在25℃的标准条件下,频率老化为±5×10-6/5年,压控晶振输出信号采用标准CMOS输出,输出负载15pF,且上升/下降时间仅4ns,抗干扰性能好,波形质量高,十年频率老化率仅±10ppm,可以长期保障频率稳定性。
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